OWC using a monolithically integrated 200 µm APD OEIC in 035 µm BiCMOS technology
نویسندگان
چکیده
منابع مشابه
Realization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications
.................................................................................................... viii Özet ............................................................................................................... ix Chapter
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ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.24.000918